| PART |
Description |
Maker |
| PD45128163-SU PD45128163G5-A75SU-9JF PD45128163G5- |
128M-bit Synchronous DRAM 4-bank/ LVTTL WTR (Wide Temperature Range)
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) 128兆位同步DRAM 4银行，LVTTL水树（宽温度范围
|
Elpida Memory, Inc.
|
| K5L5628JTM-DH18 K5L5628JBM K5L5628JBM-DH18 K5L5628 |
256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM
|
SAMSUNG[Samsung semiconductor]
|
| PD45128163G5-A10LT-9JF PD45128163G5-A10T-9JF PD451 |
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
|
ELPIDA[Elpida Memory]
|
| UPD45128841G5-A80T-9JF UPD45128841G5-A80LT-9JF PD4 |
SDRAM|4X4MX8|CMOS|TSOP|54PIN|PLASTIC
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
SDRAM|4X8MX4|CMOS|TSOP|54PIN|PLASTIC
128M-bit Synchronous DRAM 4-bank/ LVTTL WTR (Wide Temperature Range)
|
Elpida Memory, Inc.
|
| HY57V28420HCLT-H HY57V28420HCLT-K HY57V28420HCLT |
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
SDRAM - 128Mb
32Mx4|3.3V|4K|6/K/H/8/P/S|SDR SDRAM - 128M 32Mx4 | 3.3 | 4K的| 6/K/H/8/P/S |特别提款权的SDRAM - 128M
|
HYNIX SEMICONDUCTOR INC
TE Connectivity, Ltd.
|
| G5616 G5616R51U G5616RZ1U |
Complete DDR, DDRII and DDRIII Memory Solution Synchronous Buck PWM Controller, 3A LDO, Buffered Reference
|
Global Mixed-mode Techn...
|
| K4S510632C K4S510632C-TC7C |
128M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|
| M2V28S40TP-8L M2V28S20TP M2V28S20TP-6 M2V28S20TP-7 |
128M Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HYB39S512400AEL-7.5 |
128M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
INFINEON TECHNOLOGIES AG
|
| UPD44164084F5-E40-EQ1 UPD44164364F5-E50-EQ1 |
18M-BIT DDRII SRAM 4-WORD BURST OPERATION 1800万位的SRAM 4条DDRII字爆发运
|
NEC, Corp.
|
